Uwe Schroeder
Biography
Uwe Schroeder, Ph.D., is Deputy Scientific Director of NaMLab since 2009. The main research topics are material properties of ferroelectric hafnium oxide and the integration of the material into future devices.
Prior to joining NaMLab, Schroeder was in a Senior Staff Scientist position at Qimonda, which was Infineon Technologies Memory Division and Siemens Semiconductor before. He jointed Siemens in 1997 for DRAM capacitor development in the DRAM Development Alliance with IBM and Toshiba in Hopewell Jct., NY before transferring to Infineon’s Memory Development Center in Dresden, Germany in 2000. Here, he continued the research on high k dielectric and its integration into DRAM capacitors as a project manager. During this work the so far unknown ferroelectric properties of doped HfO2 based dielectrics were found in 2007. He focused on a detailed understanding of these new material properties and their integration into memory devices. He is (co-) author of more than 350 papers and conference contributions and more than 30 patents, including more than 70 peer-reviewed publications, 40 invited presentations, and editor of a book on ferroelectric HfO2 material properties and based devices.
Schroeder received a Master degree in Physics and a PhD degree in Physical Chemistry field from University of Bonn, Germany including a research visit at UC California, Berkeley and worked at University of Chicago as a post-doctoral researcher.
